Dataquest12d
Peking University develops groundbreaking chip, sans silicon
Using their proprietary bismuth-based materials—a high-performance semiconductor (Bi2O2Se) and a high-dielectric oxide gate (Bi2SeO5)—researchers achieved thin, leak-free gate structures. This design ...
Yahoo12d
Return of the gigahertz wars: New Chinese transistor uses bismuth instead of silicon to potentially sock it to Intel and TSMC with 40% more speed
in which high-mobility 2D semiconductor Bi2O2Se was epitaxially integrated by high-K layered native-oxide dielectric Bi2SeO5 with an atomically smooth interface, enabling a high electron mobility ...