Intel将会使用High-NA EUV光刻机生产14A也就是1.4nm级工艺产品 ，但具体时间和产品未定，有可能在2026年左右量产，或许用于未来的Nova Lake、Razer Lake。

快科技2月26日消息，ASML Twinscan EXE:5000 EUV是当今世界上最先进的EUV极紫外光刻机，支持High-NA也就是高孔径，Intel去年抢先拿下了第一台，目前已经在 ...

快科技2月25日消息，Intel宣布，ASML首批两台高数值孔径（High-NA EUV）极紫光刻机已经在其工厂投入生产。初步数据显示，其效率、可靠性比上一代EUV ...

Extreme-ultraviolet (EUV) lithography at 13.5 nm is expected to be introduced in high-volume semiconductor chip production over the next three years. Research is now underway to investigate sub-10 ...

Silicon photodiodes for detection of UV and EUV photon. The SXUV series diodes show less than 2% responsivity change after exposure to billions of 10 micrjoule/cm2 pulses from 157 and 193 nm excimer ...

Extreme ultraviolet (EUV) lithography is the next step in this trend. It uses radiation of wavelength 13.5 nm, thereby offering significant potential to extend the resolution of photolithography.

TNO is a specialist in contamination control for extreme ultraviolet lithography (EUV). We develop modules, research equipment, and strategies for the contamination control of EUV lithography scanners ...