Since the early 1970s, scientists have been promoting gallium arsenide as a faster, more efficient substrate material than silicon for making integrated-circuit chips. However, the vast majority of ...

This publication provides a comprehensive overview of the technologies involved in the direct production of gallium-68. It serves as a specific guide for the production and quality control of metal ...

At the heart of GaN's potential lies its crystal polarity. While both nitrogen-polar (N-polar) and gallium-polar (Ga-polar) GaN exist, N-polar variants demonstrate superior performance.

74m at 93.26g/t gallium oxide and 1.56% total rare earth oxides from 72m, including 14m at 202.79g/t Ga2O3 from 89m and a top interval of 310.46 g/t Ga2O3, 5.68% TREO from 97m to 98m 53m at 72.79g ...

The revisited shallow sections were taken from surface down to 50 metres in the oxide zone and were found to contain high-grade gallium enriched with vanadium, copper, lead and silver. Golden ...