NEXPERIA e-mode GaN FET portfolio includes 12 new devices intended to address the growing demand for higher efficiency and ...

Nexperia has expanded its GaN FET portfolio with 12 new E-mode devices, available in both low- and high-voltage options.

The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...

The latest additions to the company's e-mode GaN FET portfolio include new low-voltage 40V bi-directional devices (RDSon<12mOhm) to support OVP, load switching, and low-voltage applications, including ...

Since introducing e-mode GaN FETs in 2023, Nexperia remains the only supplier in the industry to offer ... photovoltaic micro-inverters, Class-D audio amplifiers and motor control systems in e-bikes, ...

Texas Instruments today introduced the industry's first 80-V, 10-A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, which consists of a high-frequency driver and ...

We have developed an integrated, 10 GHz active gate driver for GaN FETs. It is the first chip to output an arbitrary waveform during the short time in which a GaN FET switches. The chip does this by ...

Frontgrade’s 28V GaN DC-DC Converter leverages advanced GaN FET technology to provide spacecraft ... mission processing subsystems, high power amplifiers, custom ASICs, motion control systems ...