One implementation of the two materials in RF power amplifiers is as a stack, known as GaN-on-SiC, which was intended to give ...

Furthermore, technological innovations (e.g., 200mm wafers, substrate alternatives, integrated power electronics) that enhance performance, yield, and lower costs are coming to the fore. GaN has come ...

Fraunhofer IAF has developed a monolithic bidirectional switch with a blocking voltage of 1200 V using its GaN-on-insulator ...

At the upcoming PCIM Conference (6th - 8th May, Nuremberg, Germany) Fraunhofer IAF will present a paper on a novel GaN ...

Transform ALD cluster tool has been qualified for volume production of GaN-based power devices on 8'' GaN-on-Si wafers by a ...

Recently, we have expanded the application of MST to a wider range of devices. It’s now applied to a variety of silicon technologies, from CMOS and DRAM to power and RF devices, and it’s also being ...

As GaN and SiC power technologies deliver faster, lighter, and more compact solutions, such as single-stage BDS converters, so MCUs will need to be optimised to maximise these fast-switching ...

Navitas Showcases Advances in GaN and SiC Technologies, Including World’s First Production Released 650V Bi-Directional GaNFast™ ICs at PCIM 2025 Latest releases include bi-directional GaNFast ...