In this project, a high-quality and large-diameter GaN wafer is developed to reduce energy and power losses in power devices and LEDs. Specifically, by reducing the crystal defects which affect the ...

Infineon has been able to produce GaN chips on 300 milimetre wafers, in a development hailed by the company as a world first. Hanebeck said 2.3 times more GaN chips can fit on a 300mm wafer than ...

On March 24, 2025, Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based N-polar gallium nitride on insulator (GaNOI) material ...