A world-first N-polar GaN wafer created by Chinese scientists could be a game changer for the semiconductor industry.

Joint Development Agreement (JDA) on GaN technology to build the future in ... end manufacturing capacity outside China for its GaN wafers, while ST can leverage Innoscience’s front-end ...

“GaN technology is essential to improve electronics ... manufacturing sites in Europe for producing GaN wafers, while STMicroelectronics can tap into Innoscience's front-end fabrication ...

Partnership strengthens the domestic supply chain of Polar Semiconductor, and enhances access of this dual-use technology to ...

Polar received up to $123 million through the CHIPS and Science Act to double its U.S. production capacity of sensor and power chips. This direct funding was part of more than $525 million from ...

Polar Signs Agreement with Renesas to License GaN-on-Si Technology and Onshore Commercial Fabrication of Advanced Devices on 200mm Wafers The Partnership Strengthens the Domestic Supply Chain and ...

The companies have agreed on a joint development initiative on GaN power technology ... manufacturing capacity outside China for its GaN wafers, while ST can leverage Innoscience’s front ...

Polar Semiconductor ("Polar"), the only U.S.-owned merchant foundry specializing in sensor, power, and high-voltage ...

Joint Development Agreement (JDA) on GaN technology to build the future in power electronics ... to utilize ST's front-end manufacturing capacity outside China for its GaN wafers, while ST can ...