A world-first N-polar GaN wafer created by Chinese scientists could be a game changer for the semiconductor industry.

IQE, a supplier of compound semiconductor wafer products and advanced material solutions, and X-FAB Silicon Foundries, the ...

A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world's largest N-polar gallium nitride (GaN) wafer, at eight inches ...

The companies have agreed on a joint development initiative on GaN power technology ... manufacturing capacity outside China for its GaN wafers, while ST can leverage Innoscience’s front ...

Partnership strengthens the domestic supply chain of Polar Semiconductor, and enhances access of this dual-use technology to ...

Polar and Renesas will work together to scale commercial production of GaN devices, expanding its use across automotive, data ...

Joint Development Agreement (JDA) on GaN technology to build the future in ... end manufacturing capacity outside China for its GaN wafers, while ST can leverage Innoscience’s front-end ...

Polar Semiconductor ("Polar"), the only U.S.-owned merchant foundry specializing in sensor, power, and high-voltage ...

IQE, a maker of compound semiconductor wafer products, and the analogue/mixed signal foundry X-FAB have announced a Joint ...

STMicroelectronics and Innoscience have signed a joint development agreement (JDA) to develop and manufacture gallium nitride on silicon (GaN-on-Si).