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Memory concepts that have been recently pursued range from spin-based memories (magnetoresistive random ... filamentary effect rather than a homogeneously distributed one, leading to a resistance ...
Scientists discovered a new Hall effect driven by spin currents in noncollinear antiferromagnets, offering a path to more ...
Widely anticipated as the next generation of semiconductor memory is magnetoresistive random- access memory (MRAM). As the name indicates, MRAM makes use of the magnetoresistance effect, utilizing an ...
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The Hall effect—first discovered by Edwin Hall ... which strives to build devices—such as magnetic-based storage ...
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