Magnetoresistive random-access memory, or MRAM, promises to make computers more efficient and powerful, but a few hurdles ...

Scientists discovered a new Hall effect driven by spin currents in noncollinear antiferromagnets, offering a path to more ...

Widely anticipated as the next generation of semiconductor memory is magnetoresistive random- access memory (MRAM). As the name indicates, MRAM makes use of the magnetoresistance effect, utilizing an ...