Memory concepts that have been recently pursued range from spin-based memories (magnetoresistive random ... filamentary effect rather than a homogeneously distributed one, leading to a resistance ...

Scientists discovered a new Hall effect driven by spin currents in noncollinear antiferromagnets, offering a path to more ...

Widely anticipated as the next generation of semiconductor memory is magnetoresistive random- access memory (MRAM). As the name indicates, MRAM makes use of the magnetoresistance effect, utilizing an ...

The Hall effect—first discovered by Edwin Hall ... which strives to build devices—such as magnetic-based storage ...