资讯

北京大学团队研发出全球首款二维GAAFET晶体管,以铋材料突破接触电阻量子极限,开启后摩尔时代。这项成果在《自然》发表,实测性能超越国际 ...
北京大学团队研发出全球首款二维GAAFET晶体管,以铋材料突破接触电阻量子极限,开启后摩尔时代。这项成果在《自然》发表,实测性能超越国际 ...
GAAFET,如何推动AI/ML的发展? 如今,半导体无处不在。它们是现代世界的力量——从日常的智能手机、平板电脑、笔记本电脑 ...
New GAA chip tech impresses TSMC claims its upcoming N2 manufacturing node is ahead of schedule on defect reduction, even though it is the company’s first attempt at gate-all-around (GAA) nanosheet ...
Intel's about to start launching chips fabbed on its 18A process before you know it, and TSMC has its own "A16" process ...
TSMC claims N2 defect density is lower than N3 defect density two quarters before mass production starts, reveals N2 HVM time ...