Maintenance cost : The life of low-reliability domestic silicon carbide MOSFET devices is only 1-2 years (the life of ...

American inventor Samuel Morse transmitted the first long-distance telegraph from Washington, D.C., to Baltimore: “What hath ...

In addition, Vishay will provide a portfolio roadmap for 650 V to 1,700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology ...

Alpha and Omega Semiconductor (AOS) has introduced two new surface-mount package options for its high-power MOSFET portfolio.

AOS releases state-of-the-art surface mounting package options for its industry-leading high power MOSFET portfolio ...

Housed in a small SO8L package, Toshiba’s TLP5814H gate driver photocoupler provides an active Miller clamp for driving SiC ...

The essence of the problem of bad money in domestic SiC silicon carbide MOSFET In order to pursue the specific on-resistance ...

Power management leader, Kinetic Technologies, is expanding its Power over Ethernet (PoE) portfolio with the introduction of ...

Infineon is introducing a radiation-tolerant p-channel plastic-packged power mosfet for low-earth-orbit (LEO) space ...

The state-of-the-art topside cooling (GTPAK™) and gull-wing (GLPAK™) packages meet increased performance and robust environmental demands State-of-the-art topside cooling (GTPAK™) and gull ...