Dr. Zhang’s research presented a novel vertical III-Nitride nanowire field effect transistor (FET) that can be monolithically integrated with micro LEDs for the first time. The demonstrated ...

The SF-FET demonstrates exceptional data retention, fast switching speeds of less than 20 nanoseconds, and an impressive storage density exceeding 1.9 terabytes per square centimeter.

Core MOSFETs are developed from planar transistors and FinFETs to the latest Stacked NanoSheet/NanoWire Gate-All-Around ... 3D stacking in CFET/3DS-FET or vertical-channel transistor structure ...

This has led to a host of nanowire photonic devices including photodetectors, chemical and gas sensors, waveguides, LEDs, microcavity lasers, solar cells and nonlinear optical converters.