His solution is to add a P channel MOSFET which only allows power to flow when the polarity of the source voltage is correct. The schematic above shows the P-FET on the high side of the circuit.

A step forward in the development of diamond CMOS integrated circuits. A research team at NIMS has developed the world’s first n-channel diamond MOSFET (metal-oxide-semiconductor field-effect ...

MALVERN, PA — Vishay Intertechnology, Inc. (NYSE: VSH) has expanded its portfolio with the introduction of the Gen 4.5 650 V E Series power MOSFET. Engineered for efficiency and power density ...