Navitas Semiconductor introduces a new level of reliability to meet the system lifetime requirements of the most demanding ...

Unprecedented reliability combined with superior performance & optimized, high-creepage package sets a new benchmark in ...

ROHM Semiconductor announced the development of new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for ...

Going forward, ROHM will continue to advance the development of SiC modules that balance miniaturization with high efficiency ...

Rohm has developed new 4-in-1 and 6-in-1 SiC muolded modules in the HSDIP20 package optimised for PFC and LLC converters in ...

The HSDIP20 features an insulating substrate with enhanced heat dissipation properties that suppresses the chip temperature rise even during high power operation. When comparing a typical OBC PFC ...

Navitas' HV-T2Pak SiC MOSFETs significantly increase system-level power density and efficiency while ... that extends the creepage to 6.45 mm without reducing the size of the exposed thermal pad and ...

Navitas’ HV-T2Pak SiC MOSFETs significantly increase system ... the size of the exposed thermal pad and ensuring optimal heat dissipation. In addition, the exposed thermal pad has a nickel ...

ALBANY, N.Y., May 1, 2025 /PRNewswire/ -- NoMIS Power has announced a key advancement in its next-generation 1.2 kV planar SiC MOSFET platform, achieving substantial reductions in on-resistance by ...