FREMONT, Calif. – August 12, 2020 - Spin Memory, Inc. (Spin Memory), the leading developer of MRAM technologies, today announced a new solution that will significantly improve the capabilities of ...

UC Riverside and its partners are exploring antiferromagnetic spintronics, a tech that could unlock lightning-fast, ...

A team of researchers from Beihang University and Truth Memory Corporation has fabricated a 1 Kbit spin-orbit torque magnetic random access memory (SOT-MRAM) chip with an implemented physical ...

Spin-transfer-torque magnetic random access memory (STT-MRAM) — the most advanced of these emerging technologies for solid-state non-volatile memory — is about to hit the market. This Nature ...

Fremont, Calif. – July 30, 2012 Avalanche Technology, Inc., the industry leading innovator of Spin Programmable Memory (SPMEM™) spin-transfer torque (STT_MRAM), today announced that it has closed its ...

Despite this, the oppositely aligned spin directions can be flipped to represent two distinct states, which can be used for memory storage. “The advantage of antiferromagnetic memory is higher density ...

Their innovation, based on Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM), offers a highly efficient and powerful solution for data processing and storage—a transformative step ...

This research is part of the Horizon Europe Project "2D Heterostructure Non-volatile Spin Memory Technology" (2DSPIN-TECH), supported by a UKRI grant. The National Graphene Institute (NGI) is a ...

Spin valves form the basic building blocks of MRAM, a non-volatile memory technology that stores data using the magnetization state of the device. MRAM offers high speed, low power consumption, and ...