FREMONT, Calif. – August 12, 2020 - Spin Memory, Inc. (Spin Memory), the leading developer of MRAM technologies, today announced a new solution that will significantly improve the capabilities of ...

Spin-transfer-torque magnetic random access memory (STT-MRAM) — the most advanced of these emerging technologies for solid-state non-volatile memory — is about to hit the market. This Nature ...

Fremont, Calif. – July 30, 2012 Avalanche Technology, Inc., the industry leading innovator of Spin Programmable Memory (SPMEM™) spin-transfer torque (STT_MRAM), today announced that it has closed its ...

A team of researchers from Beihang University and Truth Memory Corporation has fabricated a 1 Kbit spin-orbit torque magnetic random access memory (SOT-MRAM) chip with an implemented physical ...

UC Riverside and its partners are exploring antiferromagnetic spintronics, a tech that could unlock lightning-fast, ...

This research is part of the Horizon Europe Project "2D Heterostructure Non-volatile Spin Memory Technology" (2DSPIN-TECH), supported by a UKRI grant. The National Graphene Institute (NGI) is a ...

They are employed in a wide range of applications, such as automotive sensors, electronic compasses, and biosensors. Spin valves form the basic building blocks of MRAM, a non-volatile memory ...

exploiting spin, which refers to the intrinsic angular momentum of an electron, for information processing. Antiferromagnetic spintronics is a faster and more compact alternative to the current ...

This study is part of the Horizon Europe Project, "2D Heterostructure Non-volatile Spin Memory Technology" (2DSPIN-TECH), with support from a UKRI grant.