Infineon Technologies AG has released the world's first GaN power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with ...

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. "Due to the ...

Engineered to reduce reverse conduction losses and eliminate dead-time penalties, this innovation enables higher performance across applications like telecom, servers, DC-DC converters, USB-C chargers ...

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

Were you to bias an n-channel JFET as you would a bipolar transistor with a positive bias on its gate, the diode between gate and source would conduct, and the transistor would remain a diode with ...

The four-layer diode was the key to William Shockley's plan to revolutionize AT&T's phone system. It was a great device in theory, but not in practice -- at least not at the time when Shockley ...

Most modern electronic devices consist of several key components: transistors, capacitors, resistors, inductors and diodes. Often, they are supplemented by additional components like crystals and ...

The first transistor was about half an inch high. That's mammoth by today's standards, when 7 million transistors can fit on a single computer chip. It was nevertheless an amazing piece of technology.

and bipolar junction transistors (BJTs) including the equilibrium characteristics, modes of operation, switching and current amplifying behaviors. Prior knowledge needed: ECEA 5630 Semiconductor ...