Yet building nanoscale transistors presents a basic problem. They are bound by physical constraints that limit how ...

This paper presents a new design architecture for advanced logic SRAM cells using six vertical transistors (with carrier transport along the Z direction), stacked one on top of each other. Virtual ...

Samsung Electronics has reportedly decided to adopt Vertical Channel Transistor (VCT) DRAM as its core next-generation memory ...

By using gallium antimonide and indium arsenide instead of silicon, MIT researchers created vertical nanowire transistors.

Core MOSFETs are developed from planar transistors and FinFETs to the latest Stacked NanoSheet/NanoWire Gate-All-Around FETs (GAAFETs), and now to the cutting-edge vertical transistor 3D stacking ...

NCT has been working on commercialisation of β-Ga 2 O 3 MOSFETs since 2019. This time, the world’s highest PFOM for β-Ga 2 O ...

This vertical stacking approach allows for more transistors to be integrated into a given area, significantly enhancing ...