Credit: SciTechDaily.com A step forward in the development of diamond CMOS integrated circuits. A research team at NIMS has developed the world’s first n-channel diamond MOSFET ...

They are made by layering and etching materials like silicon to create microscopic circuits containing billions of transistors. These transistors are effectively tiny switches, managing the flow of ...

until now the most complex 2D semiconductor digital circuit – developed by the Vienna University of Technology in 2017 – contained just 115 transistors. “[This is because] carving the same ...

Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea ...

Division of Materials Science, Graduate School of Science and Technology, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan ...

Abstract: Abstract.In this study, the effect of the top gate insulator (TGI) deposition conditions on the electrical performance of dual-gate (DG) amorphous InSnZnO (ITZO) thin film transistors (TFTs) ...