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Laboratory of Advanced Materials, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai 200438, China ...
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Credit: SciTechDaily.com A step forward in the development of diamond CMOS integrated circuits. A research team at NIMS has developed the world’s first n-channel diamond MOSFET ...
until now the most complex 2D semiconductor digital circuit – developed by the Vienna University of Technology in 2017 – contained just 115 transistors. “[This is because] carving the same ...
Abstract: Abstract.In this study, the effect of the top gate insulator (TGI) deposition conditions on the electrical performance of dual-gate (DG) amorphous InSnZnO (ITZO) thin film transistors (TFTs) ...
Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, School of Materials Science and Engineering, Hunan University of Science and Technology, 2 Taoyuan Street, ...