The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...

The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...

Gallium-nitride (GaN) power devices are becoming one of the core building blocks in LiDAR sensors thanks to their ultra-fast ...

TI unveils the first 48-V integrated hot-swap eFuse and a new family of integrated GaN power stages in TOLL packaging.

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Texas Instruments today introduced the industry's first 80-V, 10-A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, which consists of a high-frequency driver and ...

TI has unveiled a new range of power-management chips to support the rapidly growing power needs of data centres.

Texas Instruments further reduces footprint area by integrating the FET and gate driver. This allows for a 4.4mΩ half-bridge + gate driver in a package of just 4.5 × 5.5mm. Integrating the GaN ...

EPC’s GaN Experts will be available during APEC, showcasing the latest generation of GaN FETs and ICs in a wide variety of applications. At APEC 2025, we are excited to showcase how EPC’s GaN ...

GaN DC-DC converter responds rapidly to dynamic power demands and provides multiple voltage outputs for maximum flexibility ...