Here we demonstrate a circuit-level avalanche in vertical GaN diodes on low-cost patterned sapphire substrate (PSS), with the avalanche voltage (1.57 kV) and avalanche current density (>2 kA/cm2) both ...

Use precise geolocation data and actively scan device characteristics for identification. This is done to store and access ...

OSRAM has developed a technology to assemble very large GaN chiplet patterning 25,600 microLEDs. Nichia developed a different ...

Two leading LED companies, Osram and Nichia, have developed dedicated microLED solutions for car headlights, enabling more ...

The team from Wisconsin-Madison claims to be the first to break the 2 kV barrier for monolithic bidirectional GaN HEMTs, with ...

With the transition from silicon transistors to gallium nitride (GaN) transistors, chargers have become smaller, more efficient, safer, and run cooler. This advancement in technology has ...