A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world’s largest N-polar gallium nitride (GaN) wafer, at eight ...

A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world's largest N-polar gallium nitride (GaN) wafer, at eight inches ...

Under the joint initiative, Innoscience will use ST’s front-end manufacturing capacity outside China for its GaN wafers. ST will be able to use Innoscience’s front-end manufacturing capacity in China ...

In addition, the agreement allows Innoscience to utilize ST’s front-end manufacturing capacity outside China for its GaN wafers, while ST can leverage Innoscience’s front-end manufacturing ...

After hours: April 23 at 4:05:10 PM EDT ...

The joint development initiative allows Innoscience to use ST’s front-end manufacturing capacity outside China for its GaN wafers, while ST can use Innoscience’s front-end manufacturing capacity in ...

By leveraging Polar’s manufacturing expertise and Renesas’ proven power semiconductor technology and commercial leadership, this strategic collaboration ensures customers a secure supply of ...