In this study, we suggest a dual-gate hybrid ferroelectric transistor (DG-HFT) consisting of the vertically stacked tellurium/α-In2Se3 junction and metal-insulator-semiconductor gate structure. This ...

Field-effect Transistors,High Current Density,High Gain,High Voltage Gain,High-density Integration,IEEE Electron Device Letters,Indium Tin Oxide,Low Budget,NAND Gate,Oxide Semiconductor,Oxygen Tension ...

Lam Research (LRCX) rose about 4% premarket after fiscal Q3 results and guidance beat expectations, which drew largely ...

The course guides students through building a modern computer system from first principles - starting with basic logic gates (NAND) and eventually creating a full hardware platform and software ...

By transforming conventional multi-gate transistors into functional quantum-dot arrays, Equal1 is establishing a benchmark for scalable spin qubit architectures, advancing quantum computing's ...