In this study, we suggest a dual-gate hybrid ferroelectric transistor (DG-HFT) consisting of the vertically stacked tellurium/α-In2Se3 junction and metal-insulator-semiconductor gate structure. This ...

Ever wondered how SSDs read and write data, or what determines their performance? Our tech explainer has you covered.

3D Technology,Channel Width,Complementary Field-effect Transistor,Critical Point,Device Performance,Device Structure,Dynamic Power,Effective Width,Electrostatic Potential,Field-effect ...

In this paper, we propose the design of Low Power universal gates like NAND and NOR. The proposed gates have been designed in such a way that the paths formed between the supply and ground rails are ...

Shares of Lam Research (NASDAQ:LRCX) rose about 4% premarket on Thursday after fiscal third-quarter results and guidance beat ...

A detailed study on the mechanism of band-to-band tunneling in carbon nanotube field-effect transistors (CNFETs) is presented. Through a dual-gated CNFET structure tunneling currents from the valence ...

JARA-FIT and 2 Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany ...

Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea ...