SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

Data centers power demands have grown considerably with LLMs, leaving power companies eager to show their solutions at APEC ...

Power device makers roll out their latest advances at APEC 2025, targeting a range of applications from AI data centers to ...

Abstract: In this article, a well calibrated FDSOI ferroelectric (Fe)-FET/FeFET is gate-stacked with a charge trap nitride (CTN) for investigating memory and synaptic ...

The source acts as the emitter filament of an electron tube; the drain acts as the collector plate; and the gate acts as controller. These elements work differently in the two main types of transistor ...

Toshiba Electronics Europe GmbH has begun mass production of the AEC-Q100 qualified TB9103FTG MOSFET gate driver IC, featured ...

Texas Instruments (TI) has announced new power chips to support the rapidly growing power needs of modern data centres, which ...

Nexperia has launched a 1,200V 30mΩ silicon carbide mosfet in a top-side-cooled plastic package with a 18.5 x 14mm footprint.

Researchers propose 3D semiconductor architectures using 2D semiconductor materials for better performance and scalability ...

By using the 600 V CoolMOS 8 SJ, Enphase is able to significantly reduce MOSFET resistance (R DS (on)) for its solar inverter systems, leading to lower conduction losses, which improves overall device ...

A group of Carnegie Mellon University researchers recently devised a method allowing them to create large amounts of a ...

After hours: March 19 at 4:05:11 PM EDT Loading Chart for FET ...