Notes: [1] Miller current: Electric current generated when high dv/dt voltage is applied to capacitance between the drain and ...

The essence of the problem of bad money in domestic SiC silicon carbide MOSFET In order to pursue the specific on-resistance ...

SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

Maintenance cost : The life of low-reliability domestic silicon carbide MOSFET devices is only 1-2 years (the life of ...

Housed in a small SO8L package, Toshiba’s TLP5814H gate driver photocoupler provides an active Miller clamp for driving SiC ...

Data centers power demands have grown considerably with LLMs, leaving power companies eager to show their solutions at APEC ...

Power device makers roll out their latest advances at APEC 2025, targeting a range of applications from AI data centers to ...

Abstract: In this article, a well calibrated FDSOI ferroelectric (Fe)-FET/FeFET is gate-stacked with a charge trap nitride (CTN) for investigating memory and synaptic ...

Notes: [1] Miller current: Electric current generated when high dv/dt voltage is applied to capacitance between the drain and gate of a MOSFET or between the collector and gate of an IGBT. [2] The ...

The source acts as the emitter filament of an electron tube; the drain acts as the collector plate; and the gate acts as controller. These elements work differently in the two main types of transistor ...