Infineon is responding to the growing demand for high-voltage automotive IGBT chips by launching a new generation of products ...

Power integrated modules are compact components comprising several high-performance power semiconductor devices, such as ...

Accordany to the company, the family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode increases the ...

BASiC Semiconductor’s SiC MOSFET modules redefine performance benchmarks for industrial and commercial energy storage PCS. With unmatched efficiency, thermal resilience, and system-level cost savings, ...

SiC Schottky diodes offer many advantages over standard silicon p/n diodes ... In 2023, Mitsubishi Electric Corporation announced a 3.3-kV/800-A SiC half-bridge power module, the FMF800DC-66 BEW. This ...

According to onsemi, SiC MOSFETs can run increasingly power-hungry cooling fans in AI data centers more efficiently and reliably than IGBTs.

In this way, using three 40-W semiconductor laser bars, conduction cooling and simple optical stacking of the three bars, laser-diode modules that provide 100 W of power out of a 400-μm-core ...

In response, Infineon Technologies is developing a new generation of high-voltage automotive IGBT chip products. Among these ...

Mitsubishi Electric Corporation will begin shipping samples of two new SLIMDIP series power semiconductor modules for room ...

The new 3.3kV/1500A XB Series HVIGBT module uses IGBT elements incorporating Mitsubishi Electric's proprietary relaxed field of cathode (RFC) diode and carrier-stored trench-gate bipolar transistor ...

Onsemi’s EliteSiC SPM 31 intelligent power modules enable high efficiency in inverter motor drives. Onsemi has launched the first generation of its 1,200-V silicon carbide (SiC) MOSFET-based SPM 31 ...