Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

The first of several GaN transistors with integrated Schottky diode is the 100 V 1.5 mΩ transistor in a 3 x 5 mm PQFN package ...

For power measurements in wireless telephony and high-speed data communication systems, the Schottky diode is the predominant choice. Current and voltage are indeed important, but power gives us a ...

Infineon Technologies has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

Infineon introduces first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use.

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode. Designed for industrial use, the CoolGaN G5 ...

Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on ISCAD Technology, Power Measurement with Schottky Diode, and GaN Solutions! Here’s a RoundUp of this ...

The high-performance SiC diodes are also notable for their lowest ... particularly in comparison to silicon Schottky devices. This reduction in heat dissipation also lowers cooling costs and ...

Japan Semiconductor Diode Market Japan’s semiconductor diode market is projected to grow at 2.3% CAGR, driven by rising demand in communications and consumer electronics sectors. TOKYO, JAPAN, April 2 ...

650V SiC Schottky diodes. Rated at 4A, 6A, 8A, 10A, and 12A, the DSCxxA065LP series is housed in the ultra-thermally efficient T-DFN8080-4 package and is designed for high-efficiency power ...