FREMONT, Calif. – August 12, 2020 - Spin Memory, Inc. (Spin Memory), the leading developer of MRAM technologies, today announced a new solution that will significantly improve the capabilities of ...

Spin-transfer-torque magnetic random access memory (STT-MRAM) — the most advanced of these emerging technologies for solid-state non-volatile memory — is about to hit the market. This Nature ...

UC Riverside and its partners are exploring antiferromagnetic spintronics, a tech that could unlock lightning-fast, ...

Fremont, Calif. – July 30, 2012 Avalanche Technology, Inc., the industry leading innovator of Spin Programmable Memory (SPMEM™) spin-transfer torque (STT_MRAM), today announced that it has closed its ...

A team of researchers from Beihang University and Truth Memory Corporation has fabricated a 1 Kbit spin-orbit torque magnetic random access memory (SOT-MRAM) chip with an implemented physical ...

Their innovation, based on Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM), offers a highly efficient and powerful solution for data processing and storage—a transformative step ...

exploiting spin, which refers to the intrinsic angular momentum of an electron, for information processing. Antiferromagnetic spintronics is a faster and more compact alternative to the current ...

This research is part of the Horizon Europe Project "2D Heterostructure Non-volatile Spin Memory Technology" (2DSPIN-TECH), supported by a UKRI grant. The National Graphene Institute (NGI) is a ...

This study is part of the Horizon Europe Project, "2D Heterostructure Non-volatile Spin Memory Technology" (2DSPIN-TECH), with support from a UKRI grant.

They are employed in a wide range of applications, such as automotive sensors, electronic compasses, and biosensors. Spin valves form the basic building blocks of MRAM, a non-volatile memory ...