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Abstract: Sah, Noyce and Shockley have attributed the decrease in the current gain of silicon transistors to recombination in the space-charge region of the emitter-base junction. It is suggested that ...

The n-p-n transistor is made by placing a p-type material between two n-type materials. The p-n-p transistor is made by placing an n-type material between two p-type materials. All these components ...

Abstract: Over the years, a number of interesting and useful properties concerning the highly predictable nature of the emitter - base voltage of bipolar transistors have been discovered. One such ...

In a significant advancement for semiconductor technology, researchers at UC Santa Barbara have unveiled novel three-dimensional (3D) transistors utilizing two-dimensional (2D) semiconductors. Their ...

Solar panels that are 99% Moon dust could be a low-cost solution to powering a future lunar base 1. To survive in the harsh ...

Their newly developed 2D transistor is said to be 40% faster than the latest 3-nanometre silicon chips from Intel and TSMC while consuming 10% less energy. This innovation, they say, could allow ...

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For decades, the semiconductor industry has been laser-focused on shrinking silicon transistors, but Peking University researchers believe the future might lie in changing materials entirely.

Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106335, Taiwan Smart Organic Materials Laboratory, Institute of Chemistry, Academia Sinica ...