The Cobra ® ICP plasma source generates high-density reactive species at low pressure. Substrate DC bias is determined by a separate ... and outstanding uniformity with clean smooth vertical profiles ...

The researchers compared results from this process to a more advanced cryo-etching process that uses hydrogen fluoride gas to ...

More information: Yu-Bin Shin et al, Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistance, Journal of Advanced Ceramics (2024). DOI: 10.26599/JAC ...

Reactive Ion Etch (RIE) is a physical etch process. A rich plasma has been made just above the wafer, and the ions are expedited toward the surface to generate a highly powerful anisotropic etch.

Typical material processes include the precision deposition of thin films, remote plasma etching of patterned wafers ... technical features such as gridded or gridless sources, DC or RF discharges and ...