Laboratory of Advanced Materials, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai 200438, China ...

Credit: SciTechDaily.com A step forward in the development of diamond CMOS integrated circuits. A research team at NIMS has developed the world’s first n-channel diamond MOSFET ...

until now the most complex 2D semiconductor digital circuit – developed by the Vienna University of Technology in 2017 – contained just 115 transistors. “[This is because] carving the same ...

Abstract: Abstract.In this study, the effect of the top gate insulator (TGI) deposition conditions on the electrical performance of dual-gate (DG) amorphous InSnZnO (ITZO) thin film transistors (TFTs) ...

The Feynman generation and those that follow will likely adopt semiconductor nodes featuring gate-all-around (GAA) transistors – the next evolution in transistor technology after FinFET.

Researchers from the National University of Singapore (NUS) have demonstrated that a single, standard silicon transistor, the fundamental building block of microchips used in computers, smartphones ...

A paper published in Nature on Wednesday describes a way to get plain-old silicon transistors to behave a lot like an actual neuron. And unlike the dedicated processors made so far, it only ...

The same layered material can be made to behave as a superconductor, metal, semiconductor or insulator by using a transistor device developed by RIKEN physicists to tweak its electronic properties.

Associate Professor Mario Lanza and his team demonstrated a groundbreaking silicon transistor that mimics neural and synaptic behaviours, marking a significant breakthrough in neuromorphic computing.

Department of Electrical and Computer Engineering, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States ...