AI chips and data center communications see big funding; 75 startups raise $2 billion. The first quarter of 2025 saw six ...

The latest additions to the company's e-mode GaN FET portfolio include new low-voltage 40V bi-directional devices (RDSon<12mOhm) to support OVP, load switching, and low-voltage applications, including ...

Power device makers roll out their latest advances at APEC 2025, targeting a range of applications from AI data centers to ...

Nexperia has expanded its GaN FET portfolio with 12 new E-mode devices, available in both low- and high-voltage options.

Data centers power demands have grown considerably with LLMs, leaving power companies eager to show their solutions at APEC ...

奈梅亨，2025年3月18日：Nexperia今日宣布其E-mode GaNFET产品组合新增12款新器件。本次产品发布旨在满足市场对更高效、更紧凑 ...

GaN specialist Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100 V eGaN FET for power conversion applications. Designed for 48 V intermediate voltage bus architectures ...

NEXPERIA e-mode GaN FET portfolio includes 12 new devices intended to address the growing demand for higher efficiency and ...

The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) ...