资讯

C&EN20 天
MoS 2 Transistors with 4 nm hBN Gate Dielectric and 0.46 V Threshold Voltage
Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia ...
Phys.org20 天
Portable Raman analyzer detects hydrogen leaks from a distance
A portable Raman analyzer enables remote detection of hydrogen gas at concentrations below 1 part per million, identifying leaks of a few hundred milliliters per minute from several meters away.
Foreign Affairs22 天
Kerala, 1956 to the Present: India’s Miracle State
India’s 28 states have distinct identities, development models, and political fault lines. But serious analytical work on individual Indian states has long been scarce. Roy, the preeminent economic ...
C&EN26 天
Effect of Substrate on Sulfur Vacancy Defect-Mediated Photoluminescence in Two-Dimensional MoS
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge CB3 0FS, U.K.
AZoNano29 天
Enhancing Chitosan Films with Silanized Hexagonal Boron Nitride for Sustainable Applications
A recent article in the Journal of Polymer Science explores the development of chitosan–silanized hexagonal boron nitride (hBN) nanocomposite films, focusing on their structural, mechanical, and ...