Tektronix must have been quite a place to work back in the 1980s. The company offered a bewildering selection of test ...

The team from Wisconsin-Madison claims to be the first to break the 2 kV barrier for monolithic bidirectional GaN HEMTs, with 3 kV devices with an on-resistance of around just 20 Ω mm. By breaking ...

Power device makers roll out their latest advances at APEC 2025, targeting a range of applications from AI data centers to ...

We recently compiled a list of the 12 Cheap EV Stocks to Buy According to Hedge Funds. In this article, we are going to take ...

TI unveils the first 48-V integrated hot-swap eFuse and a new family of integrated GaN power stages in TOLL packaging.

A group of Carnegie Mellon University researchers recently devised a method allowing them to create large amounts of a ...

NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...

Onsemi has introduced the first generation of its 1200V SiC MOSFET based SPM 31 intelligent power modules (IPMs).

The relationship between load voltage, load current, and cell current can be drawn as follows in Figure 1. Figure 1 The load voltage versus cell and load current for a circuit where the voltage source ...

We recently compiled a list of the 15 Best EV Stocks To Buy According to Billionaires. In this article, we are going to take a look at where ON Semiconductor Corporation (NASDAQ:ON) stands against the ...