Power device makers roll out their latest advances at APEC 2025, targeting a range of applications from AI data centers to ...

SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

Data centers power demands have grown considerably with LLMs, leaving power companies eager to show their solutions at APEC ...

In a significant advancement for semiconductor technology, ECE's Prof. Kaustav Banerjee , co-authors Arnab Pal & Wei Cao and researchers have unveiled novel three-dimensional (3D) transistors ...

Texas Instruments (TI) has announced new power chips to support the rapidly growing power needs of modern data centres, which ...

The $ARIO token, which has a total fixed supply of 1 billion tokens, is a core component of the ecosystem that is used for ...

Toshiba Electronics Europe GmbH has begun mass production of the AEC-Q100 qualified TB9103FTG MOSFET gate driver IC, featured ...

A new technical paper titled “Insights Into Design Optimization of Negative Capacitance Complementary-FET (CFET)” was published by researchers at National Yang Ming Chiao Tung University. Abstract ...

The IC supplies the flexibility to function as either a single-channel H-bridge or two half-bridge channels gate driver. When paired with an external MOSFET, it can replace mechanical relays, ...

Housed in a small SO8L package, Toshiba’s TLP5814H gate driver photocoupler provides an active Miller clamp for driving SiC ...

Results show a suppressed improvement with MFMIS topology over the MFIS topology in the subthreshold region if implemented with the CFET architecture due to the CFET-specific common-gate structure. We ...

A team of researchers at Peking University claims to have made a breakthrough in chip technology, potentially reshaping the ...