In a significant advancement for semiconductor technology, researchers at UC Santa Barbara have unveiled novel three-dimensional (3D) transistors utilizing two-dimensional (2D) semiconductors. Their ...

Return of the gigahertz wars: New Chinese transistor uses bismuth instead of silicon to potentially sock it to Intel and TSMC with 40% more speed News By Jeremy Laird published 12 March 2025 ...

3月11日，漫步者宣布推出一款全新的无线平板主动降噪蓝牙耳机——NeoBuds Planar。这款耳机以其先进的技术配置为主打，包括第三代平板振膜单元、Hi ...

Some also include current sensing. The paralleled silicon IGBT and GaN hemt efficiency argument goes like this: The GaN transistor has low conduction and low switching losses at low traction loads, ...

In 1958, the first integrated circuit flip-flop was built using two transistors at Texas Instruments. The chips of today contain more than 1 billion transistors. The memory that could once support an ...

Source: NIST In theory, though, carbon nanotube FETs can outperform today’s finFETs and perhaps other next-generation transistor types in R&D. Targeted for beyond the 3nm node or before, carbon ...

SE: Starting in 2011, the industry moved from planar transistors to next-generation finFETs. Chipmakers continue to extend today’s finFET transistors at advanced nodes. Some will extend the finFET to ...

The designer is revealed as the legendary [Bob Pease], and the transistors take us back to the semiconductor physicist [Jean Hoerni], inventor of the planar transistor and one of the famous eight ...

FinFET transistors are a significant change from planar devices. GLOBALFOUNDRIES collaborated with Synopsys on TCAD to model and simulate the changes and to speed up the process development and ...