Credit: SciTechDaily.com A step forward in the development of diamond CMOS integrated circuits. A research team at NIMS has developed the world’s first n-channel diamond MOSFET ...

Abstract: This paper investigates the dependence of effective carrier mobility on the channel length in oxide thin-film transistors (TFTs). Bottom-gate staggered TFTs fabricated with a sputtered ...

They are made by layering and etching materials like silicon to create microscopic circuits containing billions of transistors. These transistors are effectively tiny switches, managing the flow of ...

until now the most complex 2D semiconductor digital circuit – developed by the Vienna University of Technology in 2017 – contained just 115 transistors. “[This is because] carving the same ...

Abstract: Abstract.In this study, the effect of the top gate insulator (TGI) deposition conditions on the electrical performance of dual-gate (DG) amorphous InSnZnO (ITZO) thin film transistors (TFTs) ...

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