Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

The latest package in Vishay’s Power DFN family, the DFN33A features a compact 3.3 mm by 3.3 mm footprint and an extremely low typical height of 0.88 mm, allowing the Vishay General Semiconductor ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Infineon Technologies has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode ...

The first of several GaN transistors with integrated Schottky diode is the 100 V 1.5 mΩ transistor in a 3 x 5 mm PQFN package ...

Infineon introduces first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use.

Here, a normally on (d-mode) HEMT is combined with the standard e-mode device as a BDS. A cascoded LV Schottky diode in the gate-source path of this d-mode device controls its off-behavior, hence ...

Altera, a division of Intel Corp., has begun production shipments of the Agilex 7 field programmable gate array (FPGA) M-Series, which integrates high bandwidth memory and supports DDR5 and LPDDR5 ...

Abstract: This paper investigates the single event effects (SEE) in SiC MOSFET integrated with a junction barrier diode (JMOS). During irradiation experiments, JMOS exhibited drain-to-source leakage ...

1mΩ is at 50A 25°C with 5V on the gate, and rises to ~1.8mΩ at the max operating temperature of 150°C (minimum is -40°C). The preliminary data sheet has no maximum Rds(on) figures – Electronics Weekly ...

“Applications including power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation, reaction wheels and deep space probes,” said EPC. Taking the 300V version ...