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MIIT Key Laboratory of Advanced Display Materials and Devices, Jiangsu Engineering Research Center for Quantum Dot Display, School of Materials Science and Engineering, Institute of Optoelectronics & ...

Researchers at Fraunhofer IAF have developed a GaN MBDS suitable for the 1200 V voltage class with integrated free-wheeling diodes and successfully integrated it into their own GaN technology. The ...

Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, School of Nanoscience ...

Infineon Technologies AG has released the world's first GaN power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with ...