The same layered material can be made to behave as a superconductor, metal, semiconductor or insulator by using a transistor device developed by RIKEN physicists to tweak its electronic properties.

Researchers from the National University of Singapore (NUS) have demonstrated that a single, standard silicon transistor, the fundamental building block of microchips used in computers, smartphones ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN ...

Associate Professor Mario Lanza and his team demonstrated a groundbreaking silicon transistor that mimics neural and synaptic behaviours, marking a significant breakthrough in neuromorphic computing.

A paper published in Nature on Wednesday describes a way to get plain-old silicon transistors to behave a lot like an actual neuron. And unlike the dedicated processors made so far, it only ...

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses and enhance system efficiency. The integrated diode also streamlines power stage ...

Abstract: An integrated bridge network of four transistors is used as a self-neutralized active element in tuned RLC amplifier designs. The bridge network compensates for the transistor collector-base ...

Infineon’s CoolGaN™ Transistors with integrated Schottky diode enhance power system performance by minimizing dead time-related losses. Infineon Technologies AG has launched the world’s first gallium ...

A transistor is a key component in electronics, often used as a switch or to amplify a signal from a sensor. NPN (negative-positive-negative) transistors are the most used transistor. An ...

Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=16 ...

The Feynman generation and those that follow will likely adopt semiconductor nodes featuring gate-all-around (GAA) transistors – the next evolution in transistor technology after FinFET.