2004年1月30日 · Al2O3 films were deposited by atomic layer deposition (ALD) at temperatures as low as 33 °C in a viscous-flow reactor using alternating exposures of Al(CH3)3 (trimethylaluminum [TMA]) and H2O. Low-...

2016年9月1日 · Nowadays, the Atomic Layer Deposition (ALD) technology can be use in a large-scale industrial production because of its advantages. The ALD technique can be classified as one of a few methods significant for meeting the contemporary requirements formulated for processes of thin film deposition.

Selective Area ALD（SA-ALDとも呼ぶ。選択的エリアALD）について 異なる表面の状態を利用して、一部のエリアだけ原子層を堆積する技術のこと。エリア”A”とエリア（”B”）は材質がことなるので、エリア”B”にのみ膜が堆積されていく。

2022年3月24日 · This study aimed to examine the growth characteristics and dielectric strength of ALD Al2O3 films grown at low temperatures (≤ 150 °C) for potential application in flexible electronic devices.

2021年4月30日 · In situ mass spectrometry study on surface reactions in atomic layer deposition of Al 2 O 3 thin films from trimethylaluminum and water

2022年11月4日 · Al2O3 thin films deposited by thermal Atomic Layer Deposition (ALD) at 200 °C, which up to now has always resulted in the amorphous phase. The 5 nm thick films were deposited on Ga2O3, ZnO, and Si nanowire substrates 100 nm or less in diam.

ALD at 58 °C was demonstrated for the first time on a poly(ethylene terephthalate) (PET) polymeric substrate. Al 2O 3 ALD coatings on PET bottles resulted in reduced CO 2 gas permeabilities. 1. Introduction The coating of thermally fragile substrates by atomic layer deposition (ALD) may provide exciting new ap-

2015年8月1日 · This work aims at the in-depth characterization of Al2O3 thin films deposited by Thermal Atomic Layer Deposition (T-ALD). Chemical, physical and optical properties were evaluated for various thicknesses of Al2O3 layers ranging from 2 nm to 100 nm, with a particular interest for very thin layers (below 10 nm).

2019年3月29日 · In this article, we report on low-temperature atomic layer deposition (ALD) of Al 2 O 3 on practical, ready-to-use composite cathodes of NCM622 (60% Ni), a technologically important material...

2017年7月11日 · These TEM images obsd. conformal Al2O3 ALD films with thicknesses that were consistent with an Al2O3 ALD growth rate of 1.1 Å/cycle. The surface species after the O3 exposures and the mass spectrometry results lead to a very different mechanism for Al2O3 ALD growth using TMA and O3 compared with Al2O3 ALD using TMA and H2O.