2022年9月1日 · The electronic characteristics of single and bilayer graphene were studied using the Hamiltonian tight-binding model. Under the influence of an electric field, the energy band gap of bilayer graphene can be adjusted from 0 to 0.29 eV.

2017年3月8日 · Graphene, being a gapless semiconductor, cannot be used in pristine form for nano-electronic applications. Therefore, it is essential to generate a finite gap in the energy dispersion at Dirac point. We present here the tight-binding model Hamiltonian taking into account of various interactions for tuning band gap in graphene.

graphene published in the last few years exceeds 3000. It was realized more than 60 years ago that the electronic band structure of graphene, should it ever be possible to produce it, would be likely to be particularly interesting. Let us start by considering a perfectly at and pure free-standing graphene sheet, with the

2009年6月11日 · Here we demonstrate the realization of a widely tunable electronic bandgap in electrically gated bilayer graphene. Using a dual-gate bilayer graphene field-effect transistor (FET) 2 and...

2011年9月25日 · Our results demonstrate the critical and hitherto neglected role of the crystallographic stacking sequence on the induction of a band gap in few-layer graphene. Producing a controlled and...

2012年2月17日 · Using density functional theory calculations, we show that the band gap of SLG can be opened to 0.16 eV (without an electric field) and 0.34 eV (with a strong electric field) when properly...

2013年10月1日 · We propose a nondestructive, simple method based on spectroscopic ellipsometry (SE) to study the band-gap structure of rGO. Such rapid, reliable band-gap energy determination modeling can offer nondestructive technical support for mass production of graphene-based materials.

Based on the tight-binding model, we investigate band structures of graphene nanohole GNH superlattices as a function of NH size and density. One common origin of band gaps for GNH superlattices with NHs of either armchair or zigzag edges is the quantum-confinement effect due to the periodic potential introduced by

2023年10月1日 · This strain-induced modification of the band structure can open up a band gap in graphene, enabling the tailoring of its electronic properties for specific applications. The ability to engineer the band gap in graphene through strain manipulation offers exciting prospects for its utilization in future electronic devices, including field-effect ...

Opening a band gap and finding a suitable substrate for graphene are two challenges for constructing graphene based nano-electronic devices. Recently, a new two-dimensional layered crystal PtSe 2 with novel electronic properties has been …