2021年11月18日 · This device even outperforms the best waveguide-coupled InP photodetectors in terms of their high-speed performance. A photodiode with a slightly broader germanium fin, device Ge150_10, shows a 3 ...

The BPX-65 complements the rest of the high speed photodiode group with an industry standard. The spectral range for these devices goes from 350 nm to 1100 nm. The responsivity and response time are optimized such that the HR series photodiodes exhibit a peak responsivity of 0.50 A/W at 800 nm and typical response times of a few hundred pico ...

Coherent offers 100+ high-speed photodetector model options with speeds from 18 GHz to 100 GHz designed for O-, C-, or dual-band operation and advantages such as high-gain or high-linearity. ... MMI coupler divides signal across 4 photodiodes. High linearity: OIP3 > …

The FDS015 Si photodiode has a 35 ps rise time and a 0.65 pF junction capacitance, making it the highest speed, lowest capacitance photodiode offered below. Alternatively, the FD11A Si photodiode has a dark current of 2 pA, making it our photodiode with the lowest dark current. ... High Speed, UV Grade Fused Silica Window to Provide Sensitivity ...

Silicon photodiodes with high sensitivity and low dark current, as well as silicon PIN photodiodes suitable for high-speed applications. Si photodiode arrays. Silicon photodiode array is a sensor with multiple Si photodiodes arranged in a single package. It can be used in a wide range of applications such as light position detection, imaging ...

2024年4月17日 · High–speed, high–power photodiodes play a key role in wireless communication systems for the generation of millimeter wave (MMW) and terahertz (THz) waves based on photonics–based techniques. Uni–traveling–photodiode (UTC–PD) is an excellent candidate, not only meeting the above–mentioned requirements of broadband (3 GHz~1 THz) and …

The TRUMPF high-speed photodiodes are available for data rates of up to 112 Gbps, respectively as a 1x1 chip or 1x2, 1x4, 1x8 or 1x12 array. Due to our expertise in the development and manufacturing of 850 nm PIN diodes, TRUMPF high-speed photodiodes meet the highest demands in terms of power, efficiency, and reliability.

High Speed Photodiodes. FCI-InGaAs-XXX series with active area sizes of 75 µm, 120 µm, 300 µm, and 500 µm, exhibit the characteristics and need for Datacom and Telecom applications. Low capacitance, low dark current and high responsivity from 1100 nm to 1620 nm make these devices ideal for high bit rate receivers used in LAN, MAN, WAN, and ...

High Speed Photodiode (1.25Gbps) OSI Optoelectronics’s family of large active area and high speed silicon PIN photodiodes possesses a large sensing area optimized for short-haul optical data communication applications at 850 nm. The photodiodes exhibit high responsivity, wide bandwidth, low dark current and low capacitance at 3.3V.

They are ideal for RF photonic links, photonically generated RF signals and high-speed, high-linearity photodetection. Key Product Features. High 3dB Bandwidth: from 1 to 100GHz; High power: up to 140mA depending on the Photodiode selection; High linearity: IP3 > 30dBm