1996年9月1日 · This work investigates the basic deposition properties of selective tungsten chemical vapor deposition (W-CVD) using the process of silane reduction of WF 6 with the SiH …

The most frequently used chemistries for the deposition of tungsten are SiH 4-WF 6 and H 2-WF 6. In these chemistries, silane and hydrogen act as reducing agents for the WF 6 precursor. …

Tiny tungsten connectors and thin barriers are made with the precision of chemical vapor deposition (CVD) and atomic layer deposition (ALD), which adds only a few layers of atoms at …

One solution to its brittleness is to produce a material called tungsten-fiber-reinforced tungsten (W f /W), a tougher material that, through its composite structure, offers crack-dissipating …

1985年11月1日 · The technique used to analyze the selective tungsten deposition process seems to be a useful tool for optimizing the selectivity in a given system and for reducing or …

2000年7月17日 · Tungsten (W) films were deposited on Si(100) from tungsten hexacarbonyl, [W(CO) 6], by low-pressure chemical vapor deposition (CVD) in an ultra-high vacuum (UHV) …

2017年3月23日 · Immersion deposition of tungsten is shown to be an effective process for formation of a functional tungsten film. The galvanic exchange of zinc in this process is …

Tungsten films have been deposited selectively on oxide-patterned silicon wafers by the H2 reduction of WF6 in WF6-H2 and WF6-H~-Ar gas flow systems: The deposition rate of films …

1985年11月1日 · Tungsten films have been deposited selectively on oxide‐patterned silicon wafers by the reduction of in and gas flow systems. The deposition rate of films was …

A CVD-WN film is deposited as a barrier metal for copper interconnection using thermal CVD (Chemical Vapor Deposition) of WF6/NH3/SiH4 gases. Deposition of CVD-WN film with a …