BC337−FSC/D NPN Epitaxial Silicon Transistor BC337 Features • Switching and Amplifier Applications • Suitable for AF−Driver Stages and Low−Power Output Stages • Complement to BC327/BC328 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCES Collector−Emitter Voltage 50 V VCEO Collector− ...

BC337 / BC338 — NPN Epitaxial Silicon Transistor © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC337 / BC338 Rev. 1.5 September 2015 BC337 / BC338 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver Stages and Low-Power Output Stages • Complement to BC327 / BC328

Part #: BC337. Download. File Size: 163Kbytes. Page: 4 Pages. Description: Amplifier Transistor. Manufacturer: Motorola, Inc.

See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

View BC337 by onsemi datasheet for technical specifications, dimensions and more at DigiKey.

2019年1月16日 · The BC337 is an NPN transistor with a maximum gain of 630, commonly used in low power audio applications. It can also switch loads upto 45V and 800mA hence also used as general purpose transistor.

Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

View datasheets for BC337 by ON Semiconductor and other related components here.

BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 1. Collector 2. Base 3. Emitter 1 TO-92

Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current – Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C